Title :
Study of nanoscale structure of near-field emission of semiconductor laser
Author :
Gaykovich, K.P. ; Dryakhlushin, V.F. ; Zhilin, A.V.
Author_Institution :
Inst. for Phys. of Microstruct., Russian Acad. of Sci., Novgorod, Russia
Abstract :
Results of studying a thin near-field structure of the semiconductor laser emission using the scanning near-field optical microscopy (SNOM) are presented. Significant enhancement of the resolution has been achieved by the deconvolution of obtained 2D images using Tikhonov´s method. This has enabled the detection of the true nanoscale structure of inhomogeneities in a semiconductor laser emission.
Keywords :
image resolution; nanotechnology; near-field scanning optical microscopy; semiconductor lasers; 2D image; SNOM; Tikhonov´s method; nanoscale structure; scanning near-field optical microscopy; semiconductor laser emission; Bills of materials; Computed tomography; Hidden Markov models; IEEE catalog; Nanostructures; Numerical simulation; Organizing; Semiconductor lasers;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158919
