DocumentCode
2438566
Title
An effective model for evaluating vertical propagation delay in TSV-based 3-D ICs
Author
Watanabe, Masayuki ; Niioka, Nanako ; Kobayashi, Tetsuya ; Karel, Rosely ; Fukase, Masa-aki ; Imai, Masashi ; Kurokawa, Atsushi
Author_Institution
Hirosaki Univ., Aomori, Japan
fYear
2015
fDate
2-4 March 2015
Firstpage
519
Lastpage
523
Abstract
This paper proposes an effective model for evaluating vertical signal propagation delay in through silicon via (TSV) based three-dimensional integrated circuits (3-D ICs). The capacitance model for on-chip interconnects is also proposed. All parasitic parameter values for an entire structure can be calculated by the closed-form equations. The delay model is constructed with the first- or second-order function of each parameter that obtained from a typical structure. The results obtained by the on-chip interconnect capacitance and delay models are in excellent agreement with those by a field solver and circuit simulator, respectively. We also show that the model is very useful for evaluating an effect of process and design parameters on vertical signal propagation delay such as the sensitivity and variability analysis.
Keywords
integrated circuit interconnections; integrated circuit modelling; sensitivity analysis; three-dimensional integrated circuits; 3D IC; TSV based three-dimensional integrated circuits; capacitance model; circuit simulator; delay model; field solver; first-order function; on-chip interconnect capacitance; on-chip interconnects; parasitic parameter values; second-order function; sensitivity analysis; through silicon via based three-dimensional integrated circuits; variability analysis; vertical signal propagation delay; Delays; Integrated circuit interconnections; Integrated circuit modeling; Mathematical model; Silicon; System-on-chip; Through-silicon vias; 3-D IC; Delay; closed-form expression; sensitivity analysis; through silicon via (TSV);
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
978-1-4799-7580-8
Type
conf
DOI
10.1109/ISQED.2015.7085479
Filename
7085479
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