DocumentCode :
2438615
Title :
Defect detection under realistic leakage models using multiple IDDQ measurements
Author :
Patel, Chintan ; Singh, Abhishek ; Plusquellic, Jim
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Maryland Univ., Baltimore, MD, USA
fYear :
2004
fDate :
26-28 Oct. 2004
Firstpage :
319
Lastpage :
328
Abstract :
IDDQ or steady state current testing has been extensively used in the industry as a mainstream defect detection and reliability screen. The background leakage current has increased significantly with the advent of ultra deep submicron technologies. The increased background leakage makes it difficult to use single threshold IDDQ testing to differentiate defect-free chips from those with defects that draw small amount of currents. Several techniques that improve the resolution of IDDQ testing have been proposed to replace the single threshold detection scheme. However, even these techniques are challenged to detect defects in the presence of leakage currents in excess of a few mA. All of these techniques use a single IDDQ measurement per circuit configuration for detection and thus the scalability of these techniques is limited. Quiescent signal analysis (QSA) is a novel IDDQ defect detection and diagnosis technique that uses IDDQ measurements at multiple chip supply pads. Implicit in our methodology is a leakage calibration technique that scales the total leakage current over multiple simultaneous measurements. This helps in decreasing the background leakage component in individual measurements and thus increases the resolution of this technique to subtle defects. The effectiveness of this technique is demonstrated in This work using simulation experiments on portion of a production power grid. Predicted chip size and leakage values from the International Technology Roadmap for semiconductors (ITRS) are used in these experiments. The performance of the proposed technique is evaluated using three different intra-die process variation distribution models.
Keywords :
SPICE; built-in self test; circuit simulation; failure analysis; fault diagnosis; integrated circuit measurement; integrated circuit testing; leakage currents; regression analysis; IDDQ defect detection; IDDQ defect diagnosis technique; International Technology Roadmap for semiconductors; defect free chips; intra die process variation distribution models; leakage calibration technique; leakage current; multiple IDDQ measurements; production power grid; quiescent signal analysis; realistic leakage models; regression analysis; single IDDQ measurement; single threshold IDDQ testing; steady state current testing; ultra deep submicron technologies; Calibration; Circuit testing; Current measurement; Leak detection; Leakage current; Production; Scalability; Semiconductor device measurement; Signal analysis; Steady-state;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Conference, 2004. Proceedings. ITC 2004. International
Print_ISBN :
0-7803-8580-2
Type :
conf
DOI :
10.1109/TEST.2004.1386967
Filename :
1386967
Link To Document :
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