Title :
Dependence of a single-electron transistor gain on the position and dimensions of gate electrode
Author :
Abramov, I.I. ; Ignatenko, S.A.
Author_Institution :
Belarussian State Univ. of Informatics & Radioelectron., Minsk, Belarus
Abstract :
The gain of a single-electron transistor depending on the position and dimensions of the gate electrode has been studied. Experimental data for an Al/AlO/sub X//Al transistor have been used in computation.
Keywords :
aluminium compounds; single electron transistors; Al-AlO-Al; gate electrode; single-electron transistor; Artificial intelligence; Electric resistance; Electric variables; Electrodes; Helium; IEEE catalog; Informatics; Material properties; Organizing; Single electron transistors;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158924
