Title :
Technological aspects of manufacturing planar microwave diodes with Au-Ti(ZrB/sub x/)-n-n/sup +/ 4HSiC schottky barrier
Author :
Boltovets, N.S. ; Ivanov, V.N. ; Konakova, R.V. ; Kudrik, Ya.Ya. ; Milenin, V.V. ; Ageyev, O.A. ; Svetlichniy, A.M. ; Solovyov, S.I. ; Sudarshan, T.S.
Abstract :
The parameters of planar diodes with Au-ZrB/sub x/-n-n/sup +/4HSiC Schottky barrier have been studied both before and after rapid thermal annealing (RTA) at T=1000/spl deg/C. A possibility to produce high-voltage diode structures that remain serviceable after the RTA at T=1000/spl deg/C is demonstrated.
Keywords :
Schottky barriers; gold compounds; microwave diodes; rapid thermal annealing; silicon compounds; titanium compounds; zirconium compounds; 1000 degC; Au-Ti(ZrB)-HSiC; RTA; Schottky barrier; high-voltage planar microwave diode structure; rapid thermal annealing; Helium; IEEE catalog; Manufacturing; Microwave technology; Organizing; Schottky barriers; Schottky diodes; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158934
