A monolithic mixer IC: design and characteristics on n-implant only, buried p- and MBE wafers

Author

Bharj, S.S. ; Yun, Y.-H. ; Hou, D.

Author_Institution

M/A-COM Inc., Lowell, MA, USA

fYear

1990

fDate

8-10 May 1990

Firstpage

899

Abstract

A monolithic high-performance MESFET mixer integrated circuit has been developed for general purpose applications. In order to achieve high dynamic range, low power consumption, and small size, active circuit techniques have been utilized for applications of up to 4 GHz. The balanced mixer, consisting of active phase-splitting networks and a commutator cell, was fabricated on different wafers having n-implant only, buried p-layer and molecular beam epitaxy. The monolithic integrated circuit has shown a conversion gain of 1 dB with RF and LO rejections greater than 20 dB, up to 4 GHz. A detailed comparison of the performance of the IC on different wafers is presented.<>

Keywords

MMIC; Schottky gate field effect transistors; field effect integrated circuits; ion implantation; mixers (circuits); molecular beam epitaxial growth; 1 dB; 4 GHz; MBE wafers; MESFET mixer; MMIC; active circuit techniques; active phase-splitting networks; balanced mixer; buried p-layer; commutator cell; conversion gain; integrated circuit; molecular beam epitaxy; monolithic mixer IC; n-implant only wafers; Application specific integrated circuits; Dynamic range; FETs; Gallium arsenide; Impedance matching; Local oscillators; MESFET integrated circuits; Molecular beam epitaxial growth; Monolithic integrated circuits; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1990., IEEE MTT-S International

Conference_Location

Dallas, TX

Type

conf

DOI

10.1109/MWSYM.1990.99723

Filename

99723