Title :
Germanium-doped epitaxial silicon layers for SHF ICs
Author :
Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, O.N. ; Yankovski, Yu.N.
Author_Institution :
Belarussian State Univ., Minsk, Belarus
Abstract :
It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased.
Keywords :
MIS structures; MOSFET; epitaxial layers; germanium; integrated circuits; leakage currents; p-n junctions; semiconductor doping; silicon; Ge; Ge-doping; MOS structure; MOSFET process; SHF IC; Si; breakdown voltage; epitaxial silicon layer; integrated circuit; leakage current; metal-oxide-semiconductor field effect transistor; p-n junction; Dielectrics; Epitaxial layers; Germanium; Helium; IEEE catalog; Leakage current; Microwave technology; Organizing; Silicon; Voltage;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.158939
