• DocumentCode
    2438901
  • Title

    Germanium-doped epitaxial silicon layers for SHF ICs

  • Author

    Brinkevich, D.I. ; Prosolovich, V.S. ; Yankovski, O.N. ; Yankovski, Yu.N.

  • Author_Institution
    Belarussian State Univ., Minsk, Belarus
  • fYear
    2003
  • fDate
    8-12 Sept. 2003
  • Firstpage
    573
  • Lastpage
    575
  • Abstract
    It is shown that Ge-doping of silicon may be implemented in the technology of the SHF IC manufacture. Epitaxial layers doped with germanium allow for the leakage current to be decreased and for the breakdown voltage of p-n-junctions and MOS structures produced by the MOSFET process to be increased.
  • Keywords
    MIS structures; MOSFET; epitaxial layers; germanium; integrated circuits; leakage currents; p-n junctions; semiconductor doping; silicon; Ge; Ge-doping; MOS structure; MOSFET process; SHF IC; Si; breakdown voltage; epitaxial silicon layer; integrated circuit; leakage current; metal-oxide-semiconductor field effect transistor; p-n junction; Dielectrics; Epitaxial layers; Germanium; Helium; IEEE catalog; Leakage current; Microwave technology; Organizing; Silicon; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea, Ukraine
  • Print_ISBN
    966-7968-26-X
  • Type

    conf

  • DOI
    10.1109/CRMICO.2003.158939
  • Filename
    1256625
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2438901