DocumentCode :
2438919
Title :
Improved electromigration test techniques of layered metal structures at wafer level
Author :
Katto, Hisao
Author_Institution :
Device Dev. Center, Hitachi Ltd., Japan
fYear :
1994
fDate :
16-19 Oct 1994
Firstpage :
149
Abstract :
The current constant stress (J-constant) technique is useful for evaluating the resistance rise, but can not evaluate “n” values because of metal temperature scattering among samples. Two modified Jc techniques are advised. By controlling the metal temperature at t(stress)=0 within ±1°C of the target temperature, the “temperature-controlled” J-constant technique can evaluate n values efficiently. By monitoring the power and adjusting the stress current, the power-constant technique can reduce excess joule-heating and keep the metal temperature constant during stress, and smaller n values are obtained
Keywords :
Acceleration; Argon; Artificial intelligence; Electromigration; Heating; Monitoring; Scattering; Stress; Temperature control; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop, 1994. Final Report., 1994 International
Conference_Location :
Lake Tahoe, CA
Print_ISBN :
0-7803-1908-7
Type :
conf
DOI :
10.1109/IRWS.1994.515849
Filename :
515849
Link To Document :
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