Title :
Effects of reverse bias on multijunction cells
Author :
Yoo, H.I. ; Iles, P.A.
Author_Institution :
TECSTAR/ASD, CA, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Cascade multijunction GaInP/GaAs solar cells show increased tendency to degrade after exposure to reverse currents, the result of partial or full shadowing of the cells. Here, the authors present expertise results, and discuss possible root causes of this degradation, and also list several possible protective measures
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; solar cells; GaInP-GaAs; cascade multijunction GaInP/GaAs solar cells; performance degradation; protective measures; reverse bias effects; reverse currents exposure; root causes; shadowing; Cities and towns; Current measurement; Degradation; Gallium arsenide; Light emitting diodes; Photovoltaic cells; Protection; Shadow mapping; Testing; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654228
