Title :
Comparison of Al0.51In0.49P and Ga0.51 In0.49P window layers for GaAs and GaInAsP solar cells
Author :
Jaakkola, R. ; Lammasniemi, J. ; Kazantsev, A.B. ; Tappura, K.
Author_Institution :
Dept. of Phys., Tampere Univ. of Technol., Finland
fDate :
29 Sep-3 Oct 1997
Abstract :
Two window layer materials, Al0.51In0.49P (E g=2.3 eV) and Ga0.51In0.49P (Eg =1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga0.84In0.16As0.68P0.32 (Eg=1.55 eV) solar cells. Due to the wider band-gap of Al0.51In0.49P, the increased spectral response was observed for both GaAs and Ga0.84In0.16As0.68 P0.32 material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm2 to 34.4 mA/cm2 with the Al0.51In0.49P window layer at AM0. Similar improvement was observed for the Ga0.84In0.16As 0.68P0.32 solar cells
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; molecular beam epitaxial growth; semiconductor device testing; semiconductor growth; semiconductor thin films; solar cells; 1.55 eV; 1.88 eV; 2.3 eV; Al0.51In0.49P; Al0.51In0.49P window layers; Ga0.51In0.49P; Ga0.51In0.49P window layers; Ga0.84In0.16As0.68P0.32 ; Ga0.84In0.16As0.68P0.32 solar cells; GaAs; GaAs solar cells; MBE semiconductor growth; band-gap; short-circuit current density; spectral response; Absorption; Doping; Gallium arsenide; Heterojunctions; Inductors; Lattices; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic cells; Power conversion;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654230
