DocumentCode :
2439041
Title :
Plasma source and ADVAM-technology of thin film deposition based on discharge in anode material vapors
Author :
Borisenko, A.G.
Author_Institution :
Inst. of Nucl. Res., Acad. of Sci., Kiev, Ukraine
fYear :
2003
fDate :
8-12 Sept. 2003
Firstpage :
584
Lastpage :
585
Abstract :
Results are presented of investigating the solid state materials plasma flow source based on arc discharge in the vapors of anode material. The source may be efficient in hard vacuum or for a vacuum chamber with gas let in. It is shown that this source allows for droplet-free and highly ionized plasma flows of various metals with a compensated volumetric charge. Practical applications for this source are listed. Its implementation in the deposition of optical films with the reflection factor K=99.2% at the 1.315/spl mu/m wavelength and the deposition of resistive layers is described. This source may be specifically used in the manufacture of microwaves devices, telecommunications systems elements and ICs.
Keywords :
anodes; arcs (electric); integrated circuits; ionisation; microwave devices; optical films; plasma flow; plasma sources; solid-state plasma; telecommunication; 1.315 micron; ADVAM-technology; ICs; anode material vapor; arc discharge; droplet-free ionized plasma flow; microwave device; optical thin film deposition; plasma source; reflection factor; resistive layer; solid state materials; telecommunication system elements; vacuum chamber; volumetric charge; wavelength; Anodes; Arc discharges; Fault location; Optical films; Plasma applications; Plasma materials processing; Plasma sources; Plasma waves; Solid state circuits; Sputtering;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
Type :
conf
DOI :
10.1109/CRMICO.2003.158944
Filename :
1256630
Link To Document :
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