DocumentCode
2439043
Title
A W-band monolithic amplifier
Author
Camilleri, N. ; Chye, P. ; Gregory, P. ; Lee, A.
Author_Institution
Avantek Inc., Folsom, CA, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
903
Abstract
Monolithic amplifiers at 90 GHz have been fabricated using 75- mu m GaAs MESFET and pseudomorphic high-electron mobility transistor (PHEMT) devices. The below 0.2- mu m gate-length PHEMT devices have demonstrated an F/sub t/ of 100 GHz and an F/sub max/ of 200 GHz. Monolithic MESFET and PHEMT single-stage amplifiers have achieved 3.5-dB and 7-dB gain, respectively, at 90 GHz.<>
Keywords
MMIC; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; linear integrated circuits; microwave amplifiers; 0.2 micron; 3.5 dB; 7 dB; 75 micron; 90 GHz; EHF; GaAs; MESFET; MIMIC; MM-wave circuit; MMIC; W-band; high-electron mobility transistor; millimetre wave operation; monolithic amplifier; pseudomorphic HEMT; single-stage amplifiers; Breakdown voltage; Frequency; Gallium arsenide; Grounding; Lithography; MESFETs; PHEMTs; Performance gain; Scattering parameters; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99724
Filename
99724
Link To Document