Title :
Thin-base high efficiency InAsxP1-x/InP multi quantum well solar cells
Author :
Freundlich, A. ; Vilela, M.F. ; Monier, C. ; Aguilar, L. ; Newman, F. ; Serdiukova, I.
Author_Institution :
Space Vacuum Epitaxy Center, Houston Univ., TX, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Thin base (0.25-0.8 micron-thick) InAsxP1-x/InP multiquantum well p-i-n solar cells are fabricated by chemical beam epitaxy. An improvement of interface sharpness in the MQW region and the optimization of the cell design (emitter/base thickness and doping level) lead to an Air Mass zero (AM0) efficiency comparable to conventional thick base (>2 microns) P+ /N InP solar cells, making these cells particularly suitable for applications where reduced minority carrier diffusion length are expected
Keywords :
III-V semiconductors; arsenic compounds; carrier lifetime; chemical beam epitaxial growth; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; solar cells; 0.25 to 0.8 mum; AM0 efficiency; Air Mass zero efficiency; InAsxP1-x/InP multi quantum well solar cells; InAsP-InP; chemical beam epitaxy; doping level; emitter/base thickness; high efficiency solar cells; interface sharpness improvement; p-i-n solar cells; reduced minority carrier diffusion length; thin-base solar cells; Coatings; Indium phosphide; Mass spectroscopy; PIN photodiodes; Photoluminescence; Photovoltaic cells; Quantum well devices; Reflection; Temperature measurement; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654235
