DocumentCode
2439281
Title
Influence of bonding thickness on stability of integrated circuits at effect of electromagnetic fields
Author
Starostenko, V.V. ; Grygoriev, Ye.V. ; Taran, Ye.P. ; Rukavishnikov, A.V.
Author_Institution
Tavrical Nat. Univ., Simferopol, Ukraine
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
628
Lastpage
629
Abstract
The technique of numerical calculation of stability integrated circuits is adduced depending on thickness (depth) of bonding at effect of pulse electromagnetic fields. The data on influencing depth of inhomogeneous bonding on threshold values of an electric field strength of a dropping electromagnetic wave are obtained.
Keywords
electromagnetic pulse; integrated circuit bonding; thickness measurement; electric field strength; inhomogeneous bonding; integrated circuit stability; pulse electromagnetic field; Bonding; CMOS technology; Circuit stability; EMP radiation effects; Electromagnetic fields; IEEE catalog; Integrated circuit technology; Organizing; Pulse circuits; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.158959
Filename
1256645
Link To Document