Tandem GaSb/InGaAsSb thermophotovoltaic cells

Author

Andreev, V.M. ; Khvostikov, V.P. ; Larionov, V.R. ; Rumyantsev, V.D. ; Sorokina, S.V. ; Shvarts, M.Z. ; Vasil´ev, V.I. ; Vlasov, A.S.

Author_Institution

A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

935

Lastpage

938

Abstract

Computer modelling of a tandem thermophotovoltaic (TPV) system has been carried out. The monolithic GaSb/InGaAsSb tandem TPV devices have been designed and fabricated by LPE. The cell consists of: nGaSb (substrate); (n-p)In_xGa_1-xAs_ySb_1-y (E_g≈0.56 eV, bottom cell); p⁺⁺-n⁺⁺GaSb (tunnel junction); (n-p)-GaSb (top cell). External quantum yields of 80% at 800-1600 nm wavelength (top cell) and of about 75% at 1800-2100 nm (bottom cell) have been measured. V_OC=0.61 V and FF=0.75 were achieved in a tandem cell at current density of 0.7 A/cm ²

Keywords

III-V semiconductors; gallium compounds; liquid phase epitaxial growth; p-n heterojunctions; photovoltaic cells; semiconductor device models; semiconductor growth; 0.56 eV; 0.61 V; 1800 to 2100 nm; 800 to 1600 nm; GaSb-InGaAsSb; GaSb/InGaAsSb tandem thermophotovoltaic cells; LPE; bottom cell; computer modelling; current density; external quantum yields; substrate; top cell; tunnel junction; Current density; Design optimization; P-n junctions; Photonic band gap; Photovoltaic cells; Physics computing; Radiative recombination; Sun; Temperature; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654241

Filename

654241