Characterization of MWCNT VLSI Interconnect with Self-Heating Induced Scatterings

Performance of multiwall carbon nanotube (MWCNT)-based VLSI interconnect has been studied under the strong influence of scattering induced by self-heating. Using modified Landauer Buttiker formalism along with Fourier heat transfer equation we have estimated interconnect parameters at different diameters. Anisotropic thermal conductivity has been considered for temperature distribution calculation using FDTD method for primitive defect-less MWCNT. Using the relaxation time approximation, we have studied scattering dynamics in calculating resistance. Electronic and thermal transport equations have been coupled and solved iteratively to get accurate estimation of temperatures and resistances. Total intrinsic resistance has been estimated as low as 16 Ω for a MWCNT of 100 nm outer diameter. Even though temperature gradient has been calculated as high as 6000K/m the most hot spot has been estimated only 0.0035K higher than the surroundings, which is not enough temperature to reach melting point. Study of scattering parameters confirmed the higher bandwidth with low transmission loss (10 THz within -20dB limit) is achievable for MWCNTs with more shells (D>50 nm).