DocumentCode
243955
Title
Perfomance Improvement with Dedicated Transistor Sizing for MOSFET and FinFET Devices
Author
Posser, Gracieli ; Belomo, Jozeanne ; Meinhardt, Cristina ; Reis, R.
Author_Institution
Inst. de Inf., Univ. Fed. do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
fYear
2014
fDate
9-11 July 2014
Firstpage
418
Lastpage
423
Abstract
This work presents a transistor sizing tool to optimize performance taking into account area and power consumption in MOSFET and FinFET devices. The sizing tool is based on Geometric Programming (GP). This tool is modeled to deal with the discrete behavior of FinFET transistor sizing due to the width quantization of these devices. ISCAS´85 benchmark circuits were mapped to a typical standard cell library in 45nm bulk CMOS technology. The size characteristics of this library were adapted to build a predictive 14nm FinFET cell library. Considering transistor sizes generally used in a standard cell library, our transistor sizing improves the delay of MOSFET circuits in 52.5%, on average, keeping almost the same area and power than the sizing provided by the standard-cell library. Good results are achieved considering two simple techniques to adjust continuous to discrete sizing for FinFET circuits: rounding and truncation. These simple sizing strategies produce FinFET circuits 77% faster, on average, keeping the same area and power. Further, results show that the performance can be significantly improved if is considered a Performance Dedicated Cell Library with more cells sizes than the adopted in traditional cell libraries.
Keywords
CMOS integrated circuits; MOSFET; circuit optimisation; geometric programming; low-power electronics; FinFET devices; FinFET transistor sizing; ISCAS´85 benchmark circuits; MOSFET; bulk CMOS technology; geometric programming; performance optimization; power consumption; size 45 nm; standard-cell library; transistor sizing tool; width quantization; Computer architecture; Delays; FinFETs; Libraries; Logic gates; Standards; CAD tool; FinFET devices; Physical design; performance optimization; transistor sizing;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
Conference_Location
Tampa, FL
Print_ISBN
978-1-4799-3763-9
Type
conf
DOI
10.1109/ISVLSI.2014.13
Filename
6903400
Link To Document