Title :
Germanium electro-absorption modulator for power efficient optical links
Author :
Lim, Andy Eu-Jin ; Liow, Tsung-Yang ; Duan, Ning ; Ding, Liang ; Yu, Mingbin ; Lo, G.Q. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm2 giving an extinction ratio of ~10 dB for a wavelength range of 1580 - 1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated. This high speed low power electro-absorption modulator is extremely useful in developing CMOS-compatible integrated silicon photonics circuits for short reach optical communication links.
Keywords :
CMOS integrated circuits; electroabsorption; elemental semiconductors; germanium; integrated optics; optical links; optical modulation; p-i-n photodiodes; CMOS-compatible integrated silicon photonics circuits; Ge; evanescent-coupled germanium electro-absorption modulator; high speed low power electro-absorption modulator; optical communication links; p-i-n photodetector; power efficient optical links; wavelength 1580 nm to 1610 nm; Absorption; Optical fibers; Optical modulation; Optical surface waves; Photodetectors; Silicon; Electro-absorption; germanium; modulator; silicon photonics;
Conference_Titel :
Microwave Photonics, 2011 International Topical Meeting on & Microwave Photonics Conference, 2011 Asia-Pacific, MWP/APMP
Conference_Location :
Singapore
Print_ISBN :
978-1-61284-716-0
DOI :
10.1109/MWP.2011.6088680
