Germanium electro-absorption modulator for power efficient optical links

Author

Lim, Andy Eu-Jin ; Liow, Tsung-Yang ; Duan, Ning ; Ding, Liang ; Yu, Mingbin ; Lo, G.Q. ; Kwong, D.L.

Author_Institution

Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2011

fDate

18-21 Oct. 2011

Firstpage

105

Lastpage

108

Abstract

We report a novel evanescent-coupled germanium electro-absorption modulator with a small active area of 16 μm² giving an extinction ratio of ~10 dB for a wavelength range of 1580 - 1610 nm. In addition, monolithic integration of both evanescent-coupled Ge electro-absorption modulator and Ge p-i-n photodetector is demonstrated. This high speed low power electro-absorption modulator is extremely useful in developing CMOS-compatible integrated silicon photonics circuits for short reach optical communication links.

Keywords

CMOS integrated circuits; electroabsorption; elemental semiconductors; germanium; integrated optics; optical links; optical modulation; p-i-n photodiodes; CMOS-compatible integrated silicon photonics circuits; Ge; evanescent-coupled germanium electro-absorption modulator; high speed low power electro-absorption modulator; optical communication links; p-i-n photodetector; power efficient optical links; wavelength 1580 nm to 1610 nm; Absorption; Optical fibers; Optical modulation; Optical surface waves; Photodetectors; Silicon; Electro-absorption; germanium; modulator; silicon photonics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2011 International Topical Meeting on & Microwave Photonics Conference, 2011 Asia-Pacific, MWP/APMP

Conference_Location

Singapore

Print_ISBN

978-1-61284-716-0

Type

conf

DOI

10.1109/MWP.2011.6088680

Filename

6088680