DocumentCode :
243993
Title :
LastingNVCache: A Technique for Improving the Lifetime of Non-volatile Caches
Author :
Mittal, Sparsh ; Vetter, Jeffrey S. ; Dong Li
Author_Institution :
Oak Ridge Nat. Lab., Oak Ridge, TN, USA
fYear :
2014
fDate :
9-11 July 2014
Firstpage :
534
Lastpage :
540
Abstract :
Use of non-volatile memory (NVM) devices such as resistive RAM (ReRAM) and spin transfer torque RAM (STT-RAM) for designing on-chip caches holds the promise of providing a high-density, low-leakage alternative to SRAM. However, low write endurance of NVMs, along with the write-variation introduced by existing cache management schemes significantly limits the lifetime of NVM caches. We present LastingNVCache, a technique for improving the cache lifetime by mitigating the intra-set write variation. LastingNVCache works on the key idea that by periodically flushing a frequently-written data-item, next time the block can be made to load into a cold block in the set. Through this, the future writes to that data-item can be redirected from a hot block to a cold block, which leads to improvement in the cache lifetime. Microarchitectural simulations have shown that LastingNVCache provides 6.36X, 9.79X, and 10.94X improvement in lifetime for single, dual and quad-core systems, respectively. Also, its implementation overhead is small and it outperforms a recently proposed technique for improving lifetime of NVM caches.
Keywords :
cache storage; magnetoelectronics; random-access storage; LastingNVCache; intra-set write variation; microarchitectural simulations; nonvolatile cache lifetime; nonvolatile memory devices; resistive RAM; spin transfer torque RAM; Benchmark testing; Computational modeling; Measurement; Microarchitecture; Nonvolatile memory; Radiation detectors; Random access memory; Non-volatile memory (NVM); device lifetime; intra-set write variation; microarchitectural technique; wear-leveling; write-endurance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI (ISVLSI), 2014 IEEE Computer Society Annual Symposium on
Conference_Location :
Tampa, FL
Print_ISBN :
978-1-4799-3763-9
Type :
conf
DOI :
10.1109/ISVLSI.2014.69
Filename :
6903419
Link To Document :
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