Title :
Impact ionization wave breakdown and picosecond UHF pulse generation in GaAs drift step recovery diodes
Author :
Kozlov, V.A. ; Rozhkov, Alexsander V. ; Kardo-Sysoyev, A.F.
Author_Institution :
Physico-Tech. Inst., Russian Acad. of Sci., St. Petersburg, Russia
Abstract :
UHF IMPATT oscillations followed (under certain conditions) by a reversible impact ionization wave breakdown and picosecond pulse generation at up to 50GHz frequencies have been for the first time experimentally observed in GaAs DSRDs. A possible physical model and practical implementation of the phenomenon observed are discussed for ultra wideband UHF applications and for optoelectronics.
Keywords :
IMPATT oscillators; UHF circuits; UHF oscillators; charge storage diodes; gallium arsenide; impact ionisation; optoelectronic devices; pulse generators; GaAs DSRDs; GaAs drift step recovery diode; UHF IMPATT oscillation; impact ionization wave breakdown; optoelectronics; picosecond pulse generation; Circuit testing; Diodes; Electric breakdown; Electron traps; Gallium arsenide; Impact ionization; Organizing; Propagation delay; Pulse generation; Silicon;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.159024
