Title :
GaAs picosecond high-voltage drift diodes
Author :
Rozhkov, Alexsander V. ; Kozlov, V.A.
Author_Institution :
Physico-Tech. Inst., RAS, St. Petersburg, Russia
Abstract :
Experimental results of studying recovery dynamics of GaAs diodes based on weakly-doped layers grown by liquid-phase epitaxy are presented. The diodes belong to a class of drift step recovery diodes (DSRDs) and are intended for operation in circuits generating high-power picosecond pulses. The obtained values of recovery rates for the reverse voltage (dU/dt/spl sim/2000V/ns) considerably exceed the highest recovery rates of known picosecond charge-storage diodes (CSDs) and are record values for DSRDs.
Keywords :
charge storage diodes; gallium arsenide; liquid phase epitaxial growth; recovery; CSD; DSRD; GaAs diode; charge-storage diode; drift step recovery diode; high-power picosecond pulse; liquid-phase epitaxy; picosecond high-voltage drift diode; recovery dynamic; recovery rate; reverse voltage; weakly-doped layer; Circuits; Diodes; Epitaxial growth; Gallium arsenide; IEEE catalog; Microwave technology; Organizing; Pulse generation; Silicon carbide; USA Councils;
Conference_Titel :
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location :
Sevastopol, Crimea, Ukraine
Print_ISBN :
966-7968-26-X
DOI :
10.1109/CRMICO.2003.159025
