DocumentCode
2440575
Title
GaAs picosecond high-voltage drift diodes
Author
Rozhkov, Alexsander V. ; Kozlov, V.A.
Author_Institution
Physico-Tech. Inst., RAS, St. Petersburg, Russia
fYear
2003
fDate
8-12 Sept. 2003
Firstpage
803
Lastpage
804
Abstract
Experimental results of studying recovery dynamics of GaAs diodes based on weakly-doped layers grown by liquid-phase epitaxy are presented. The diodes belong to a class of drift step recovery diodes (DSRDs) and are intended for operation in circuits generating high-power picosecond pulses. The obtained values of recovery rates for the reverse voltage (dU/dt/spl sim/2000V/ns) considerably exceed the highest recovery rates of known picosecond charge-storage diodes (CSDs) and are record values for DSRDs.
Keywords
charge storage diodes; gallium arsenide; liquid phase epitaxial growth; recovery; CSD; DSRD; GaAs diode; charge-storage diode; drift step recovery diode; high-power picosecond pulse; liquid-phase epitaxy; picosecond high-voltage drift diode; recovery dynamic; recovery rate; reverse voltage; weakly-doped layer; Circuits; Diodes; Epitaxial growth; Gallium arsenide; IEEE catalog; Microwave technology; Organizing; Pulse generation; Silicon carbide; USA Councils;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference
Conference_Location
Sevastopol, Crimea, Ukraine
Print_ISBN
966-7968-26-X
Type
conf
DOI
10.1109/CRMICO.2003.159025
Filename
1256711
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