History, condition and tendencies of development concerning subject of active microwave devices in CNIRTI

Author

Garmash, V.F. ; Kistchinsky, A.A. ; Svistov, E.A.

Author_Institution

Central Res. Radio Tech. Inst., Fed. State Unitary Enterprise, Moscow, Russia

fYear

2003

fDate

8-12 Sept. 2003

Firstpage

807

Lastpage

810

Abstract

In this paper, we see further development of subjects in foundation and development of the independent departments engaged in high-frequency subjects. Development of local oscillator systems on the basis of microwave diodes had carried out widely. Bipolar transistor oscillators with electric frequency tuning from 100 MHz up to 5 GHz had been developed. For higher frequencies from 5 GHz up to 11 GHz the series of Gunn oscillators had been developed. To provide required level of microwave component parameters technological reconstruction had been carried out in CNIRTI. Nowadays a number of wideband components (power amplifiers up to 20 W, T/R modules, frequency converters, switching matrix, etc.) have been developed and produced for octave and ultra-octave bands up to 18 GHz by CNIRTI.

Keywords

Gunn oscillators; bipolar transistors; microwave diodes; 100 MHz to 5 GHz; 20 W; 5 to 11 GHz; CNIRTI; Gunn oscillator; active microwave device; bipolar transistor oscillator; electric frequency tuning; high-frequency subject; local oscillator system; microwave component parameter; microwave diode; technological reconstruction; ultra-octave band; wideband component; Bipolar transistors; Diodes; Frequency; Gunn devices; History; Local oscillators; Matrix converters; Microwave devices; Microwave oscillators; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology, 2003. CriMiCo 2003. 13th International Crimean Conference

Conference_Location

Sevastopol, Crimea, Ukraine

Print_ISBN

966-7968-26-X

Type

conf

DOI

10.1109/CRMICO.2003.159026

Filename

1256712