Title :
Structures and characteristics of 400A–300V monolithic high power transistors
Author_Institution :
Toshiba Transistor Works, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki, 210, Japan
Abstract :
Toshiba has developed two types of high power npvn transistors which have collector current ratings of 400A and collector-emitter voltage ratings of 300V. The first is a conventional one and the second is a monolithic Darlington-connected one. Both have the same 40mmφ pellet size. They are produced by triple diffusion techniques. The structures, features and electrical characteristics of these transistors are described.
Keywords :
Electrodes; Integrated circuits; Power transistors; Resistance; Switches; Thyristors; Transistors;
Conference_Titel :
Power Electronics Specialists Conference, 1975 IEEE
Conference_Location :
Culver City, California, USA
DOI :
10.1109/PESC.1975.7085592
