DocumentCode
2440714
Title
A new approach to the design of a gate turn-off thyristor
Author
Becke, Hans W. ; Neilson, John M.
Author_Institution
RCA Solid State Division, Somerville, N.J., USA
fYear
1975
fDate
9-11 June 1975
Firstpage
292
Lastpage
299
Abstract
A thyristor is discussed in which high gate turn-off capability has been achieved with a very simple gate-cathode geometry through the use of a highly conductive layer in the gated base, a high gate-cathode breakdown voltage, and an integral non-regenerative section in which final turnoff occurs.
Keywords
Abstracts; Anodes; Cathodes; Electric potential; Logic gates; Reliability; Switches;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1975 IEEE
Conference_Location
Culver City, California, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1975.7085594
Filename
7085594
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