Title :
A new approach to the design of a gate turn-off thyristor
Author :
Becke, Hans W. ; Neilson, John M.
Author_Institution :
RCA Solid State Division, Somerville, N.J., USA
Abstract :
A thyristor is discussed in which high gate turn-off capability has been achieved with a very simple gate-cathode geometry through the use of a highly conductive layer in the gated base, a high gate-cathode breakdown voltage, and an integral non-regenerative section in which final turnoff occurs.
Keywords :
Abstracts; Anodes; Cathodes; Electric potential; Logic gates; Reliability; Switches;
Conference_Titel :
Power Electronics Specialists Conference, 1975 IEEE
Conference_Location :
Culver City, California, USA
DOI :
10.1109/PESC.1975.7085594
