Title :
Gigabit photodiodes in standard digital nanometer CMOS technologies
Author :
Hermans, Carolien ; Leroux, Paul ; Steyaert, Michiel
Author_Institution :
ESAT-MICAS, Katholieke Univ., Leuven, Belgium
Abstract :
A study of the performance of photodiodes in a fully standard sub 0.1 /spl mu/m technology is presented. A one-dimensional model is developed to get a rough idea of speed and responsivity of the detectors. Next, two-dimensional simulations of two basic unit cells are performed The importance of the side-wall capacitance of a junction is demonstrated, and a clear trade-off between speed and responsivity is shown. According to simulations, the nwell diode can achieve a bitrate of 200 Mbit/s and a responsivity of 0.36 A/W. By considering also the p/sup +/ to nwell junction, a bitrate of 1 Gbit/s and a responsivity of 0.08 A/W can be achieved. Finally, the layout issues of different test diodes are discussed.
Keywords :
CMOS integrated circuits; capacitance; carrier density; integrated optoelectronics; minority carriers; optical receivers; photodiodes; semiconductor device models; 1 Gbit/s; 200 Mbit/s; MEDICI; gigabit photodiodes; minority carrier concentration; one-dimensional model; responsivity; sidewall capacitance; standard digital nanometer CMOS; two-dimensional simulations; CMOS technology; Doping; High speed optical techniques; Optical devices; Optical fibers; Optical receivers; Photodiodes; Semiconductor device modeling; Semiconductor diodes; Silicon;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256808
