Title :
Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range
Author :
Afzalian, A. ; Flandre, D.
Abstract :
The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.
Keywords :
p-i-n photodiodes; photodetectors; semiconductor device models; silicon-on-insulator; surface recombination; ultraviolet detectors; BOX-substrate interface; Si; UV range; depletion layer; electrical simulations; fast drift photocurrent; fully-depleted lateral photodetectors; high quantum efficiency; high selectivity; lateral PIN photodiodes; modelling; stationary waves; surface recombination; thin film-SOI; volume recombination; Absorption; Diodes; Electric variables measurement; Mathematical model; PIN photodiodes; Performance evaluation; Semiconductor thin films; Silicon; Thickness measurement; Wavelength measurement;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256809
