DocumentCode
2440993
Title
Measurements, modelling and electrical simulations of lateral PIN photodiodes in thin film-SOI for high quantum efficiency and high selectivity in the UV range
Author
Afzalian, A. ; Flandre, D.
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
55
Lastpage
58
Abstract
The present paper investigates the influence of the SOI structure and in particular the presence of the buried oxide on the Quantum efficiency vs. wavelength characteristics of fully-depleted thin film silicon-on-insulator (SOI) lateral photodetectors by measurements, modelling and simulations.
Keywords
p-i-n photodiodes; photodetectors; semiconductor device models; silicon-on-insulator; surface recombination; ultraviolet detectors; BOX-substrate interface; Si; UV range; depletion layer; electrical simulations; fast drift photocurrent; fully-depleted lateral photodetectors; high quantum efficiency; high selectivity; lateral PIN photodiodes; modelling; stationary waves; surface recombination; thin film-SOI; volume recombination; Absorption; Diodes; Electric variables measurement; Mathematical model; PIN photodiodes; Performance evaluation; Semiconductor thin films; Silicon; Thickness measurement; Wavelength measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256809
Filename
1256809
Link To Document