DocumentCode :
2441087
Title :
Floating gate AC nulling (FGAN) technique for characterisation of matching properties of MOS capacitors
Author :
Ning, Zhenqiu ; De Schepper, Luc ; Gillon, Renaud ; Tack, Marnix
Author_Institution :
AMI Semicond. Belgium bvba, Oudenaarde, Belgium
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
79
Lastpage :
82
Abstract :
This paper presents a floating gate AC nulling technique for the characterisation and modelling of the matching properties of MOS capacitors. The technique is insensitive to the parasitic capacitor and charge accumulation on the floating gate, due to AC nulling. It is accurate, robust and easily used.
Keywords :
MOS capacitors; capacitance measurement; MOS capacitor matching properties characterisation; floating gate AC nulling technique; floating gate charge accumulation; floating gate parasitic capacitor; Ambient intelligence; Circuit testing; Clocks; MOS capacitors; MOS devices; Matched filters; Robustness; Semiconductor device measurement; Switched capacitor circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
Type :
conf
DOI :
10.1109/ESSDERC.2003.1256815
Filename :
1256815
Link To Document :
بازگشت