DocumentCode
2441087
Title
Floating gate AC nulling (FGAN) technique for characterisation of matching properties of MOS capacitors
Author
Ning, Zhenqiu ; De Schepper, Luc ; Gillon, Renaud ; Tack, Marnix
Author_Institution
AMI Semicond. Belgium bvba, Oudenaarde, Belgium
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
79
Lastpage
82
Abstract
This paper presents a floating gate AC nulling technique for the characterisation and modelling of the matching properties of MOS capacitors. The technique is insensitive to the parasitic capacitor and charge accumulation on the floating gate, due to AC nulling. It is accurate, robust and easily used.
Keywords
MOS capacitors; capacitance measurement; MOS capacitor matching properties characterisation; floating gate AC nulling technique; floating gate charge accumulation; floating gate parasitic capacitor; Ambient intelligence; Circuit testing; Clocks; MOS capacitors; MOS devices; Matched filters; Robustness; Semiconductor device measurement; Switched capacitor circuits; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256815
Filename
1256815
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