Interface coupling and film thickness measurement on thin oxide thin film fully depleted SOI MOSFETs

Author

Cassé, M. ; Poiroux, T. ; Faynot, O. ; Raynaud, C. ; Tabone, C. ; Allain, F. ; Reimbold, G.

Author_Institution

Dept. of Silicon Technol., CEA-LETI, Grenoble, France

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

87

Lastpage

90

Abstract

We report here the results of film thickness measurements of thin film fully-depleted (FD) SOI MOSFETs, using the interface coupling dependence of the threshold voltage. We have investigated in particular the validity of the extraction method for ultrathin gate oxide and thin film devices. We found a discrepancy between the extracted electrical value and the physical one measured by TEM. We show that the extraction of the correct film thickness requires the determination of-the physical oxide thickness. We have also compared the results obtained for neighbouring PMOS and NMOS.

Keywords

MOSFET; dielectric thin films; semiconductor device measurement; silicon-on-insulator; thickness measurement; NMOS; PMOS; TEM; film thickness measurement; fully depleted SOI MOSFET; interface coupling measurement; physical oxide thickness; thin oxide thin film MOSFET; threshold voltage interface coupling dependence; ultra-thin gate oxide; Capacitance; Electric variables measurement; Equations; MOSFETs; Semiconductor films; Silicon on insulator technology; Thickness measurement; Thin film devices; Threshold voltage; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256817

Filename

1256817