Localized charge storage in nanocrystal memories: feasibility of a multi-bit cell

Author

Corso, D. ; Crupi, I. ; Ancarani, V. ; Ammendola, G. ; Molas, G. ; Perniola, L. ; Lombardo, S. ; Gerardi, C. ; De Salvo, B.

Author_Institution

CNR-IMM, Sezione Di Catania, Italy

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

91

Lastpage

94

Abstract

We have realized Si nanocrystal memory cells in which the Si dots have been deposited by chemical vapor deposition (CVD) on the tunnel oxide and then covered by a CVD control oxide. In this paper we report a study on the potential of this type of cell for multi-bit storage. In particular, the possibilities offered by these devices from the point of view of program/erase mechanisms, endurance, and charge retention are shown and discussed.

Keywords

chemical vapour deposition; elemental semiconductors; flash memories; hot carriers; nanoelectronics; semiconductor quantum dots; silicon; Si; channel hot electron programming; charge retention; chemical vapor deposition; control oxide; endurance; flash technology; localized charge storage; multi-bit cell; nanocrystal memory cells; program-erase mechanisms; tunnel oxide; Chemical vapor deposition; Dielectrics; Electron traps; Nanocrystals; Nonvolatile memory; Potential well; Rapid thermal processing; Scalability; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256818

Filename

1256818