Title :
On the investigation of spiral inductors processed on Si substrates with thick porous Si layers
Author :
Royet, A.S. ; Cuchet, R. ; Pellissier, D. ; Ancey, P.
Author_Institution :
LETI-CEA/Grenoble, Grenoble, France
Abstract :
This paper investigates the high frequency (HF) characterization of spiral inductors on various Si substrates. Some of them were chemically anodized in order to form a thick porous Si layer, which provides a low substrate loss and greatly enhanced inductor quality factor. The HF performance and behavior of these inductors have been analyzed by modeling and parameter extraction in order to compare all the substrates.
Keywords :
Q-factor; anodisation; elemental semiconductors; porous semiconductors; silicon; substrates; thin film inductors; Si; Si substrates; chemical anodization; high frequency characterization; inductor quality factor; integrated planar inductors; low substrate loss; microwave inductors; parameter extraction; spiral inductors; thick porous silicon layers; Conductivity; Dielectric measurements; Dielectric substrates; Frequency; Hafnium; Inductors; Performance evaluation; Q factor; Silicon; Spirals;
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
DOI :
10.1109/ESSDERC.2003.1256823
