DocumentCode
2441222
Title
On the investigation of spiral inductors processed on Si substrates with thick porous Si layers
Author
Royet, A.S. ; Cuchet, R. ; Pellissier, D. ; Ancey, P.
Author_Institution
LETI-CEA/Grenoble, Grenoble, France
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
111
Lastpage
114
Abstract
This paper investigates the high frequency (HF) characterization of spiral inductors on various Si substrates. Some of them were chemically anodized in order to form a thick porous Si layer, which provides a low substrate loss and greatly enhanced inductor quality factor. The HF performance and behavior of these inductors have been analyzed by modeling and parameter extraction in order to compare all the substrates.
Keywords
Q-factor; anodisation; elemental semiconductors; porous semiconductors; silicon; substrates; thin film inductors; Si; Si substrates; chemical anodization; high frequency characterization; inductor quality factor; integrated planar inductors; low substrate loss; microwave inductors; parameter extraction; spiral inductors; thick porous silicon layers; Conductivity; Dielectric measurements; Dielectric substrates; Frequency; Hafnium; Inductors; Performance evaluation; Q factor; Silicon; Spirals;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256823
Filename
1256823
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