Multi-bias dependence of threshold voltage, subthreshold swing, and mobility in G/sup 4/-FETs

Author

Akarvardar, K. ; Dufrene, B. ; Cristoloveanu, S. ; Blalock, Benjamin J. ; Higashino, T. ; Mojarradi, M.M. ; Kolaw, E.

Author_Institution

Inst. of Microelectron., Electromagnetism, & Photonics, ENSERG, Grenoble, France

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

127

Lastpage

130

Abstract

Systematic measurements of four-gate SOI transistors (G/sup 4/-FET) are presented. Methods of extraction of the threshold voltage, subthreshold swing, and mobility in the linear region are discussed and results are shown. The extracted parameters demonstrate the complex dependence of the multi-gate biases, which is explained. A new extraction technique for the carrier mobility and effective width of devices with isolated multiple gates is proposed.

Keywords

carrier mobility; field effect transistors; semiconductor device models; silicon-on-insulator; G/sup 4/-FET; accumulation-mode transistor; four-gate SOI transistors; isolated multiple gate effective width; linear region carrier mobility; multi-gate biases; parameter extraction technique; subthreshold swing; threshold voltage multi-bias dependence; Aerospace electronics; Current measurement; Extrapolation; Laboratories; MOSFET circuits; Microelectronics; Parameter extraction; Photonics; Propulsion; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256827

Filename

1256827