Title :
Spectral response of InP/Si solar cells irradiated to high proton fluences
Author :
Messenger, S.R. ; Xapsos, M.A. ; Walters, R.J. ; Cotal, H.L. ; Wojtczuk, S.J. ; Serreze, H.B. ; Summers, G.P.
Author_Institution :
SFA Inc., Largo, MD, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
InP/Si solar cells have been irradiated with 3 MeV protons to very large fluences where carrier removal, instead of decreases in minority carrier diffusion length, dominates the radiation response. In this regime, radiation-induced expansion of the base depletion width causes I sc to increase above the pre-irradiation level before falling catastrophically to zero. Current-voltage (IV), capacitance-voltage (CV), quantum efficiency (QE), and electrochemical capacitance-voltage (ECV) profiling measurements are presented
Keywords :
III-V semiconductors; carrier lifetime; elemental semiconductors; indium compounds; minority carriers; proton effects; semiconductor device testing; silicon; solar cells; 3 MeV; I-V measurements; InP-Si; InP/Si solar cells; base depletion width; capacitance-voltage measurements; carrier removal; electrochemical measurements; high proton fluence irradiation; minority carrier diffusion length; quantum efficiency measurements; radiation response; spectral response; Capacitance-voltage characteristics; Current measurement; Extraterrestrial measurements; Failure analysis; Indium phosphide; Laboratories; Photovoltaic cells; Protons; Silicon; Space technology;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654256
