• DocumentCode
    2441460
  • Title

    Elimination of notch during gate polycide stack etching by adding nitrogen in over etch step

  • Author

    Chan, Bor-Wen ; Liou, Y.H. ; Chi, Min-Hwa

  • Author_Institution
    Technol. Dev. Centre, Worldwide Semicond. Manuf. Corp., Hsinchu, Taiwan
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    54
  • Lastpage
    56
  • Abstract
    In this paper, the notch phenomenon in sub-quarter-micron DRAM polycide gate etching process is an important issue and is improved by adding N2 gas in the step of over-etch (OE). The critical dimension (CD) after etching and remaining oxide (REOX) is almost the same by using various small amount of N2 flow rate in our study. However, there are residues found around the corner of active area (AA) if too much N2 gas added; however, the residue can be removed by increasing the OE time of WSix etching
  • Keywords
    DRAM chips; sputter etching; N2; N2 gas; WSi; active area; critical dimension; gate polycide stack etching; notch elimination; over etch step; remaining oxide; sub-quarter-micron DRAM polycide gate etching process; Etching; Fabrication; Nitrogen; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma sources; Radio frequency; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Process-Induced Damage, 2000 5th International Symposium on
  • Conference_Location
    Santa Clara, CA
  • Print_ISBN
    0-9651577-4-1
  • Type

    conf

  • DOI
    10.1109/PPID.2000.870594
  • Filename
    870594
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2441460