Title :
Evaluation of plasma induced damage of HDP FSG and USG in deep sub-micron technology
Author :
Cheong, Ang Ting ; Sang Yee, Loong ; Ing, Ong Puay ; Tse Man Siu ; Sudijono, John
Author_Institution :
Dept. of Technol., Chartered Semicond. Manuf., Singapore
Abstract :
We studied and compared the extent of plasma induced damage from high density plasma (HDP) undoped silicate glass (USG) and fluorinated silicate glass (FSG) deposition on 0.18 μm transistors. Our results show that the plasma-induced damage from HDP FSG is greater than that from HDP USG. We have developed a novel integration scheme that is effective in reducing the damage from HDP FSG down to levels comparable to that of USG
Keywords :
ULSI; glass; ion-surface impact; surface treatment; 0.18 μm transistors; 0.18 mum; deep sub-micron technology; fluorinated silicate glass; high density plasma; integration scheme; plasma induced damage; undoped silicate glass; Bonding; Buffer layers; Gate leakage; Glass; Plasma applications; Plasma density; Plasma devices; Plasma materials processing; Plasma measurements; Testing;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870598
