Title :
Charge trap phenomena on EPROM device-methodology to identify the cause of the problem in IC manufacturing process to improve the electrical test yield
Author_Institution :
Motorola, Petaling Jaya, Malaysia
Abstract :
Charge trapping is an ESD phenomenon that affects the electrical performance of EPROM devices. Factors related to materials, machines, humans and environment and their critical components have been characterized and analyzed to determine the effects and identify the root cause.
Keywords :
EPROM; electrostatic discharge; environmental degradation; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; materials handling; static electrification; EPROM device; ESD phenomenon; IC manufacturing process; charge trap phenomena; charge trapping; critical components; electrical performance; electrical test yield; environmental factors; human factors; machine factors; material factors; root cause identification; Application specific integrated circuits; Biological system modeling; Ceramics; EPROM; Electrostatic discharge; Fabrication; Humans; Integrated circuit packaging; Packaging machines; Testing;
Conference_Titel :
Electrical Overstress/Electrostatic Discharge Symposium Proceedings, 1998
Conference_Location :
Reno, NV, USA
Print_ISBN :
1-878303-91-0
DOI :
10.1109/EOSESD.1998.737045
