Title :
O2-plasma degradation of low-K organic dielectric and its effective solution for damascene trenches
Author :
Yeh, Ching-Fa ; Lee, Yueh-Chuan ; Su, Yuh-Ching ; Wu, Kwo-Hau ; Lin, Chein-Hsin
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Methylsilsesquioxane, an organic spin-on dielectric, has attracted much attention as a promising low-k inter-Cu-metal dielectric because of its sufficiently low dielectric constant (<2.8) and excellent thermal stability (>500°C). However, we found that the MSQ film would be easily degraded during resist ashing in O2-plasma ambient after the film is etched with the damascene trenches being created. An innovative sidewall capping technology as an effective solution of this ashing-induced degradation has been successfully developed. This new technology has potential to fulfil the highly reliable damascene process toward Cu/MSQ integration
Keywords :
dielectric thin films; organic compounds; permittivity; spin coating; sputter etching; thermal stability; 500 C; Cu; Cu/MSQ integration; MSQ film; O2; O2-plasma ambient; O2-plasma degradation; damascene trenches; low dielectric constant; low-K organic dielectric; low-k inter-Cu-metal dielectric; methylsilsesquioxane; organic spin-on dielectric; resist ashing; sidewall capping; thermal stability; Bonding; Copper; Dielectric constant; Dry etching; Monitoring; Resists; Scanning electron microscopy; Thermal degradation; Thermal stability; Wet etching;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870601
