A Flash technology programmable non-volatile switch

Author

Auricchio, C. ; Borgatti, M. ; Martino, A. ; Maurelli, A. ; Pelliconi, R. ; Rolandi, P.L.

Author_Institution

STMicroelectronics, Agrate Brianza, Italy

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

211

Lastpage

213

Abstract

A modified Flash-EEPROM device is presented. This device operates as a non-volatile programmable pass transistor. Program and erase, operations are performed on a Flash-EEPROM cell coupled to a pass-transistor. Written and erased states of the flash cell correspond to the open and close states of the pass-transistor respectively. The Flash-programmable pass transistor (FPT) was developed for multi-context programmable-logic, and it was realized in a technology for embedded Flash-EEPROM NOR memory. No additional process steps are required. This novel device has the same program and erasing behavior as the standard Flash-EEPROM cell, measurements are reported for a 0.18 /spl mu/m technology implementation.

Keywords

flash memories; programmable logic devices; semiconductor switches; 0.18 micron; FPT; Flash technology programmable nonvolatile switch; Flash-EEPROM NOR memory; Flash-EEPROM cell; multicontext programmable-logic; programmable pass transistor; EPROM; Logic devices; Logic programming; Nonvolatile memory; Programmable logic arrays; Programmable logic devices; Reconfigurable logic; Switches; Switching circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256851

Filename

1256851