Thin L-shaped spacers for CMOS devices

Author

Augendre, E. ; Rooyackers, R. ; de Potter de ten Broeck, M. ; Kunnen, E. ; Beckx, S. ; Mannaert, G. ; Vrancken, C. ; Vassilev, V. ; Chiarella, T. ; Jurczak, M. ; Debusschere, I.

Author_Institution

IMEC, Leuven, Belgium

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

219

Lastpage

222

Abstract

This work presents the use of ultimately thin (15 nm) L-shaped spacers to open the process window for deposition-related steps. Whereas conventional spacers prevent the correct active area silicidation between two closely located transistors, these thin L-shaped spacers allow the formation of a low resistive active interconnect between transistors as close as 40 nm apart. With respect to conventional spacers, thin L-shaped spacers show equally good silicide bridging immunity, device characteristics and electrostatic discharge performance.

Keywords

MOSFET; integrated circuit interconnections; 15 nm; 40 nm; CMOS devices; active area silicidation; deposition-related process steps; electrostatic discharge performance; low resistive transistor active interconnect; process window; silicide bridging immunity; thin L-shaped spacers; CMOS technology; Costs; Electrostatic discharge; Etching; Fabrication; Ion implantation; Process control; Silicidation; Silicides; Space technology;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256853

Filename

1256853