Optical characterization of antenna-area-dependent gate oxide charging damage in MOS capacitors by photoreflectance spectroscopy

Author

Agata, Masashi ; Sogawa, Masayuki ; Maida, Osamu ; Eriguchi, Koji ; Fujimoto, Akira ; Kanashima, Takeshi ; Okuyama, Masanori

Author_Institution

Dept. of Phys. Sci., Osaka Univ., Japan

fYear

2000

fDate

2000

Firstpage

97

Lastpage

100

Abstract

Thin gate oxide charging damage has been studied by photoreflectance (PR) spectroscopy in MOS structure samples. Antenna-area-dependent oxide charging damage such as the generation of SiO₂/Si interface states as well as that of electron trap sites in the oxides, has been also addressed by the decrease of the PR peak signal intensity from MOS capacitors, and also confirmed by the capacitance-voltage (C-V) characteristics

Keywords

MOS capacitors; capacitance; electron traps; elemental semiconductors; interface states; photoreflectance; semiconductor device measurement; silicon; silicon compounds; spectral line intensity; sputter etching; surface charging; C-V characteristics; MOS capacitors; MOS structure; PR peak signal intensity; Si-SiO₂; SiO₂/Si interface states; antenna-area-dependent gate oxide charging damage; antenna-area-dependent oxide charging damage; capacitance-voltage characteristics; electron trap sites; optical characterization; photoreflectance spectroscopy; thin gate oxide charging damage; Capacitance-voltage characteristics; Frequency; MOS capacitors; Optical modulation; Plasma measurements; Reflectivity; Resists; Signal analysis; Spectroscopy; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Plasma Process-Induced Damage, 2000 5th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

0-9651577-4-1

Type

conf

DOI

10.1109/PPID.2000.870621

Filename

870621