DocumentCode
2441837
Title
Investigation of electron and hole mobilities in MOSFETs with TiN/HfO/sub 2//SiO/sub 2/ gate stack
Author
Lime, F. ; Ghibaudo, G. ; Guillaumot, B.
Author_Institution
IMEP, ENSERG, Grenoble, France
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
247
Lastpage
250
Abstract
In this work, the effective mobility of HfO/sub 2/ nMOSFETs and pMOSFETs has been investigated using low temperature measurements and constant voltage stress. It was found that the Coulomb scattering mechanism has significant influence on mobility degradation. A correlation between trapped charge and mobility degradation has been made, that could explain the difference observed in nMOS and pMOS mobility behavior compared to SiO/sub 2/.
Keywords
MOSFET; dielectric thin films; electron mobility; hafnium compounds; hole mobility; silicon compounds; titanium compounds; Coulomb scattering mechanism; MOSFET gate stack; TiN-HfO/sub 2/-SiO/sub 2/; constant voltage stress; electron mobility; high-k gate dielectrics; hole mobility; low temperature measurements; mobility degradation; nMOS; nMOSFET; pMOS; pMOSFET; trapped charge; Charge carrier processes; Degradation; Electron mobility; Hafnium oxide; MOSFETs; Scattering; Stress; Temperature measurement; Tin; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256860
Filename
1256860
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