DocumentCode
2441948
Title
SiGe channel p-MOSFETs scaling-down
Author
Andrieu, F. ; Ernst, Thomas ; Romanjek, K. ; Weber, O. ; Renard, C. ; Hartmann, J.-M. ; Toffoli, A. ; Papon, A.M. ; Truche, R. ; Holliger, P. ; Brévard, L. ; Ghibaudo, G. ; Deleonibus, S.
Author_Institution
CEA/DRT/LETI, Grenoble, France
fYear
2003
fDate
16-18 Sept. 2003
Firstpage
267
Lastpage
270
Abstract
We present an in-depth experimental study of the transport in sub-100 nm Si/sub 0.85/Ge/sub 0.15/ p-MOSFETs. Using a novel capacitive method, we have extracted the effective channel length for gate lengths down to 50 nm. We show experimentally that the performance of short channel SiGe devices are limited by the low-field transport regime.
Keywords
Ge-Si alloys; MOSFET; hole mobility; semiconductor materials; 50 nm; MOSFET scaling-down; SiGe; effective channel length; gate length; hole transport; low-field transport regime; short channel SiGe p-MOSFET; Boron; CMOS process; Capacitive sensors; Effective mass; Germanium silicon alloys; Implants; Isolation technology; MOSFET circuits; Silicon germanium; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location
Estoril, Portugal
Print_ISBN
0-7803-7999-3
Type
conf
DOI
10.1109/ESSDERC.2003.1256865
Filename
1256865
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