InGaP/GaAs and InGaAs mechanically-stacked triple-junction solar cells

Author

Takamoto, T. ; Ikeda, E. ; Agui, T. ; Kurita, H. ; Tanabe, T. ; Tanaka, S. ; Matsubara, H. ; Mine, Y. ; Takagishi, S. ; Yamaguchi, M.

Author_Institution

Japan Energy Corp., Saitama, Japan

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

1031

Lastpage

1034

Abstract

Triple-junction cells with AM1.5 efficiencies of over 33% have been demonstrated. A planar type InGaP/GaAs monolithic dual-junction cell was fabricated on a semi-insulating GaAs substrate, which has high infra-red transparency. Then a dual-junction cell, with an efficiency of 27-28%, was mechanically stacked on an InGaAs cell fabricated on an InP substrate. The bottom InGaAs cell showed a efficiency of 6.2% under the InGaP/GaAs cell, and a total efficiency of 33-34% was achieved for the four-terminal triple-junction cell

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; p-n heterojunctions; semiconductor device testing; solar cells; 27 to 28 percent; 33 to 34 percent; InGaP-GaAs-InGaAs-InP; InGaP/GaAs/InGaAs/InP triple-junction solar cells; bottom cells; infra-red transparency; mechanical stacking; solar cell fabrication; substrate; top cells; Gallium arsenide; Indium gallium arsenide; Indium phosphide; Lattices; MOCVD; Photonic band gap; Photovoltaic cells; Substrates; Surface waves; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654265

Filename

654265