• DocumentCode
    2442064
  • Title

    Impact of gate current noise on drain current noise in 90 nm CMOS technology

  • Author

    Valenza, M. ; Laigle, A. ; Martinez, F. ; Hoffmann, A. ; Rigaud, D.

  • Author_Institution
    CEM2-ccO84, Univ. Montpellier II, France
  • fYear
    2003
  • fDate
    16-18 Sept. 2003
  • Firstpage
    287
  • Lastpage
    290
  • Abstract
    Gate and drain current noises on a 90 nm CMOS technology are investigated. Gate current noise shows 1/f and white noise. White noise is very close to shot noise, and we have a quadratic variation of 1/f noise with gate current. Coherence measurements show that the increase of drain noise at high gate biases can be attributed to tunneling effects.
  • Keywords
    1/f noise; MOSFET; semiconductor device noise; shot noise; tunnelling; white noise; 1/f noise; 90 nm; CMOS technology; MOSFET; drain current noise; gate current noise; high gate bias; shot noise; tunneling effects; white noise; CMOS technology; Dielectrics; MOS devices; MOSFETs; Noise measurement; Performance evaluation; Testing; Tunneling; Voltage; White noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
  • Conference_Location
    Estoril, Portugal
  • Print_ISBN
    0-7803-7999-3
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2003.1256870
  • Filename
    1256870