Title :
EFG manufacturing line technical progress and module cost reductions under the PVMaT program
Author :
Cao, J. ; Gonsiorawski, R. ; Kardauskas, M. ; Kalejs, J. ; O´brien, C. ; Prince, M. ; Tornstrom, E.
Author_Institution :
ASE Americas Inc., Billerica, MA, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The authors describe here the progress made in the Phase 4A2 PVMaT program carried out at ASE Americas on technology improvements for module manufacturing cost reductions of edge-defined film-fed growth (EFG) wafer-based photovoltaic products. This work is directed at tasks necessary for cost effective scaling up of EFG technology from the current 4 MW and toward meeting long term high volume manufacturing goals and cost targets of around $1/W. Current PVMaT program objectives are to lower costs through: yield improvements in crystal growth and laser cutting; reduction of EFG solar cell thickness from 300 to 250 microns; raising of the average cell efficiency from 13.5% to 15% through manufacturing line improvements and new technology introduction; reduction of environmental waste in cell processing; and simplification of processes and reduction of costs in the cell interconnect and module assembly area. The authors discuss in detail the cost reductions achieved to date
Keywords :
crystal growth from melt; project engineering; semiconductor device manufacture; semiconductor growth; solar cells; 4 MW; PVMaT project; Phase 4A2; cell interconnect; crystal growth; edge-defined film-fed growth; environmental waste reduction; high volume manufacturing; laser cutting; manufacturing line improvements; module assembly; new technology introduction; photovoltaic products; solar cell thickness; Casting; Costs; Crystallization; Manufacturing automation; Manufacturing processes; Photovoltaic systems; Production; Research and development; Silicon; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654274