DocumentCode
2442240
Title
Damage in III/V semiconductors caused by hard- and soft-etching plasmas
Author
Franz, Gerhard ; Averbeck, Robert ; Auer, Michael ; Lorenz, Jochen
Author_Institution
Corp. Res. Photonics, Infineon Technol., Munich, Germany
fYear
2000
fDate
2000
Firstpage
141
Lastpage
144
Abstract
Damage in III/V semiconductors based on GaN, GaP, GaAs, and InP caused by dry etching has been investigated. The palette of plasma constituents reaches from argon as a model for pure physical etching to hydrogen which is known for its nearly pure chemical behavior. The methods employed were C(V) profiling and Hall measurements; photoluminescence (PL), scanning transmission electron microscopy (STEM) and secondary ion mass spectrometry (SIMS)
Keywords
Hall effect; III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; photoluminescence; scanning-transmission electron microscopy; secondary ion mass spectra; sputter etching; C(V) profiling; GaAs; GaN; GaP; Hall measurements; III/V semiconductors; InP; SIMS; STEM; dry etching; hard-etching plasma; photoluminescence; plasma damage; soft-etching plasma; Argon; Chemicals; Dry etching; Gallium arsenide; Gallium nitride; Hydrogen; Indium phosphide; Plasma applications; Plasma chemistry; Plasma measurements;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870644
Filename
870644
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