DocumentCode :
2442264
Title :
Optimisation of metal connections in lateral DMOS transistors for driving applications
Author :
Gassot, P. ; Desoete, B. ; Gillon, R. ; Bolognesi, D. ; Tack, M.
Author_Institution :
AMI Semicond., Oudenaarde, Belgium
fYear :
2003
fDate :
16-18 Sept. 2003
Firstpage :
327
Lastpage :
330
Abstract :
This paper presents the optimisation of the routing of multi-finger current drivers, based on lateral DMOS transistors, for switching applications, in order to limit the metal contribution. to the total driver on-resistance. The metal2 collecting current from the device fingers out of the source and drain, is shown to be the major contributor to the added series resistance for all aspect ratios, as long as the number of metal2 tracks is large enough. The experimental characterisation of the metal connection influence on the device on-resistance is successfully supported by circuit simulations, based on a lumped resistor network model of the driver.
Keywords :
field effect transistor switches; lumped parameter networks; optimisation; power MOSFET; power semiconductor switches; semiconductor device measurement; semiconductor device metallisation; semiconductor device models; device fingers metal2 collecting current; driver on-resistance; lateral DMOS transistors; lumped resistor network model; metal connection optimisation; multifinger current driver routing; multifinger transistors; series resistance; switching transistors; Ambient intelligence; CMOS technology; Circuit simulation; Contact resistance; Driver circuits; Fingers; Resistors; Routing; Semiconductor device modeling; Shape;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on
Conference_Location :
Estoril, Portugal
Print_ISBN :
0-7803-7999-3
Type :
conf
DOI :
10.1109/ESSDERC.2003.1256880
Filename :
1256880
Link To Document :
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