DocumentCode
2442399
Title
On the mechanism of plasma enhanced dielectric deposition charging damage
Author
Cheung, Kin P.
Author_Institution
Lucent Technol. Bell Labs., USA
fYear
2000
fDate
2000
Firstpage
161
Lastpage
163
Abstract
Photoconduction is shown to be the mechanism for plasma charging damage during plasma enhanced dielectric deposition. Details of the conduction process, including polarity effects, are explained. The recently measured oxide photoconductivity is shown to be in agreement with expectation. The main cause of severe charging damage is the low level of photoconduction coupled with high processing temperature
Keywords
dielectric thin films; photoconductivity; plasma deposition; charging damage; photoconduction; plasma enhanced dielectric deposition; polarity; processing temperature; Dielectric measurements; Electrical resistance measurement; Electrodes; Electrons; Leakage current; Photoconductivity; Photoelectricity; Plasma materials processing; Plasma measurements; Plasma temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location
Santa Clara, CA
Print_ISBN
0-9651577-4-1
Type
conf
DOI
10.1109/PPID.2000.870658
Filename
870658
Link To Document