Title :
On the mechanism of plasma enhanced dielectric deposition charging damage
Author_Institution :
Lucent Technol. Bell Labs., USA
Abstract :
Photoconduction is shown to be the mechanism for plasma charging damage during plasma enhanced dielectric deposition. Details of the conduction process, including polarity effects, are explained. The recently measured oxide photoconductivity is shown to be in agreement with expectation. The main cause of severe charging damage is the low level of photoconduction coupled with high processing temperature
Keywords :
dielectric thin films; photoconductivity; plasma deposition; charging damage; photoconduction; plasma enhanced dielectric deposition; polarity; processing temperature; Dielectric measurements; Electrical resistance measurement; Electrodes; Electrons; Leakage current; Photoconductivity; Photoelectricity; Plasma materials processing; Plasma measurements; Plasma temperature;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870658
