Title :
Topographical dependence of charging and new phenomenon during inductively coupled plasma (ICP) CVD process
Author :
Carrere, J.-P. ; Oberlin, J.C. ; Haond, M.
Author_Institution :
Centre of Commun., CNET STMicroelectronics, Crolles, France
Abstract :
This paper presents the influence of topographical parameters such as antenna area, perimeter and aspect ratio, on charging during an ICP oxide deposition process. We show that an extended electron-shading occurs during the beginning of the deposition. Moreover, we present a new phenomenon of drastic damaging when thin oxide layers are deposited. We attribute this to an electron current transient at the wafer dechuck in the ICP chamber
Keywords :
dielectric thin films; plasma CVD; silicon compounds; SiO2; antenna area; aspect ratio; charging; electron current transient; electron-shading; inductively coupled plasma CVD; oxide deposition; thin oxide layers; topographical parameters; Degradation; Etching; MOS devices; Plasma applications; Plasma chemistry; Plasma density; Plasma sources; Plasma temperature; Radio frequency; Space technology;
Conference_Titel :
Plasma Process-Induced Damage, 2000 5th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-9651577-4-1
DOI :
10.1109/PPID.2000.870659
