Optimization of electrothermal material parameters using inverse modeling [polysilicon fuse interconnects]

Author

Minixhofer, Rainer ; Holzer, Stefan ; Heitzinger, Clemens ; Fellner, Johannes ; Grasser, Tibor ; Selberherr, Siegfried

Author_Institution

austriamicrosysterns AG, Unterpremstatten, Austria

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

363

Lastpage

366

Abstract

A method for determining higher order thermal coefficients for electrical and thermal properties of metallic interconnect materials used in semiconductor fabrication is presented. By applying inverse modeling on transient electrothermal three-dimensional finite element simulations the measurements of resistance over time of polysilicon fuse structures can be matched. This method is intended to be applied to the optimization of polysilicon fuses for reliability and speed.

Keywords

electric fuses; electric resistance; finite element analysis; interconnections; optimisation; semiconductor device metallisation; semiconductor device models; Si; electrothermal material parameter optimization; finite element simulations; fuse speed; inverse modeling; metallic interconnect materials; polysilicon fuse structures; reliability; resistance measurement; semiconductor fabrication; thermal coefficients; transient electrothermal 3D FEM analysis; Electric resistance; Electrical resistance measurement; Electrothermal effects; Fabrication; Finite element methods; Fuses; Inorganic materials; Inverse problems; Semiconductor materials; Time measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256889

Filename

1256889