Trench sidewall doping for lateral power devices [ion implantation]

Author

Berberich, S.E. ; Bauer, A.J. ; Frey, L. ; Ryssel, H.

Author_Institution

Fraunhofer Inst. of Integrated Syst. & Device Technol., Erlangen, Germany

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

379

Lastpage

382

Abstract

Sidewall doping of trenches with a high aspect ratio and a high grade of anisotropy (90/spl deg//spl plusmn/0.5/spl deg/) by ion implantation has been investigated. Two-dimensional (2D) process simulation and delineation experiments have shown a good agreement between simulation and experimental results. The doping of the trenches has been evaluated in order to manufacture functional wells for lateral power devices. 2D device simulation has been performed to compare optimized sidewall profiles of lateral power devices with the profiles reached by ion implantation. From these data, the process parameters for the ion implantation process referring to optimal device performance have been determined.

Keywords

doping profiles; ion implantation; isolation technology; power semiconductor devices; semiconductor device measurement; semiconductor device models; semiconductor process modelling; high aspect ratio trenches; ion implantation process parameters; lateral power devices; power device functional wells; sidewall profile optimization; trench anisotropy; trench sidewall doping; Chemical vapor deposition; Dielectric substrates; Doping profiles; Glass; Insulated gate bipolar transistors; Ion implantation; Isolation technology; Manufacturing processes; Silicon on insulator technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

European Solid-State Device Research, 2003. ESSDERC '03. 33rd Conference on

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7999-3

Type

conf

DOI

10.1109/ESSDERC.2003.1256893

Filename

1256893